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半導体の物理やデバイスエレクトロニクスの分野は、長年にわたり、化学、材料、コンピュータサイエンス、エンジニアリングの全分野、さらには生物学にまで及び発展を続けてきました。過去20年間にわたり、原子間力顕微鏡（AFM, atomic force microscopy）は、多くの技術進歩において重要な役割を果たしてきました。アサイラム・リサーチの原子間力顕微鏡は、これらの複雑なデバイスやマテリアルに対して幅広いテクニックを提供しています。MFP-3D AFMファミリーや Cypher AFMファミリーは、幅広い材料やデバイスを扱える優れた研究用AFMであり、計測機器市場において他に類をみません。
AFMに関する技術的なお問い合わせ"Biodegradable electronic systems in 3D, heterogeneously integrated formats," J. K. Chang, H. P. Chang, Q. Guo, J. Koo, C. I. Wu, and J. A. Rogers, Adv. Mater. 30, 1704955 (2018). https://doi.org/10.1002/adma.201704955
"Local characterization of mobile charge carriers by two electrical AFM modes: multi-harmonic EFM versus sMIM," L. Lei, R. Xu , S. Ye, X. Wang, K. Xu, S. Hussain, Y. J. Li, Y. Sugawara, L. Xie, W. Ji, and Z. Cheng, J. Phys. Commun. 2, 025013 (2018). https://doi.org/10.1088/2399-6528/aaa85f
"Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide," V. K. Sangwan, H. S. Lee, H. Bergeron, I. Balla, M. E. Beck, K. S. Chen, and M. C. Hersam, Nature 554, 500 (2018). https://doi.org/10.1038/nature25747
"Electrochemical strain microscopy probes morphology-induced variations in ion uptake and performance in organic electrochemical transistors," R. Giridharagopal, L. Q. Flagg, J. S. Harrison, M. E. Ziffer, J. Onorato, C. K. Luscombe, and D. S. Ginger, Nat. Mater. 16, 737 (2017). https://doi.org/10.1038/nmat4918
"Multifunctional logic demonstrated in a flexible multigate oxide‐based electric‐double‐layer transistor on paper substrate," F. Shao, P. Feng, C. Wan, X. Wan, Y. Yang, Y. Shi, and Q. Wan, Adv. Electron. Mater. 3, 1600509 (2017). https://doi.org/10.1002/aelm.201600509
"Determining the resolution of scanning microwave impedance microscopy using atomic-precision buried donor structures," D. A. Scrymgeour, A. Baca, K. Fishgrab, R. J. Simonson, M. Marshall, E. Bussmann, C. Y. Nakakura, M. Anderson, and S. Misra, Appl. Surf. Sci. 423, 1097 (2017). https://doi.org/10.1016/j.apsusc.2017.06.261
"Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions," W. J. Hu, Z. Wang, W. Yu, and T. Wu, Nat. Comm. 7, 10808 (2016). https://doi.org/10.1038/ncomms10808
"Analysis of quantum conductance, read disturb and switching statistics in HfO2 RRAM using conductive AFM," A. Ranjan, N. Raghavan, J. Molina, S. J. O'Shea, K. Shubhakar, and K. L. Pey, Microelectron. Reliab. 64, 172 (2016). https://doi.org/10.1016/j.microrel.2016.07.112
"Material removal mechanism of copper chemical mechanical polishing in a periodate-based slurry," J. Cheng, T. Wang, Y. He, and X. Lu, Appl. Surf. Sci. 337, 130 (2015). https://doi.org/10.1016/j.apsusc.2015.02.076
"Carrier density modulation in a germanium heterostructure by ferroelectric switching," P. Ponath, K. Fredrickson, A. B. Posadas, Y. Ren, X. Wu, R. K. Vasudevan, M. B. Okatan, S. Jesse, T. Aoki, M. R. McCartney, D. J. Smith, S. V. Kalinin, K. Lai, and A. A. Demkov, Nat. Commun. 6, 6067 (2015). https://doi.org/10.1038/ncomms7067
"Two-dimensional quasi-freestanding molecular crystals for high-performance organic field-effect transistors," D. He, Y. Zhang, Q. Wu, R. Xu, H. Nan, J. Liu, J. Yao, Z. Wang, S. Yuan, Y. Li, Y. Shi, J. Wang, Z. Ni, L. He, F. Miao, F. Song, H. Xu, K. Watanabe, T. Taniguchi, J.-B. Xu, and X. Wang, Nat. Commun. 5, 5162 (2014). https://doi.org/10.1038/ncomms6162
"High-mobility field-effect transistors fabricated with macroscopic aligned semiconducting polymers," H.-R. Tseng, H. Phan, C. Luo, M. Wang, L. A. Perez, S. N. Patel, L. Ying, E. J. Kramer, T.-Q. Nguyen, G. C. Bazan, and A. J. Heeger, Adv. Mater. 26, 2993 (2014). https://doi.org/10.1002/adma.201305084
"Effective passivation of exfoliated black phosphorus transistors against ambient degradation," J. D. Wood, S. A. Wells, D. Jariwala, K.-S. Chen, E. Cho, V. K. Sangwan, X. Liu, L. J. Lauhon, T. J. Marks, and M. C. Hersam, Nano Lett. 14, 6964 (2014). https://doi.org/10.1021/nl5032293
"Low-voltage self-assembled monolayer field-effect transistors on flexible substrates," T. Schmaltz, A. Y. Amin, A. Khassanov, T. Meyer-Friedrichsen, H.-G. Steinrück, A. Magerl, J. J. Segura, K. Voïtchovsky, F. Stellacci, and M. Halik, Adv. Mater. 25, 4511 (2013). https://doi.org/10.1002/adma.201301176
"Using nanoscale thermocapillary flows to create arrays of purely semiconducting single-walled carbon nanotubes," S. H. Jin, S. N. Dunham, J. Song, X. Xie, J. Kim, C. Lu, A. Islam, F. Du, J. Kim, J. Felts, Y. Li, F. Xiong, M. A. Wahab, M. Menon, E. Cho, K. L. Grosse, D. J. Lee, H. U. Chung, E. Pop, M. A. Alam, W. P. King, Y. Huang and J. A. Rogers, Nat. Nanotechnol. 8, 347 (2013). https://doi.org/10.1038/nnano.2013.56
"Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions," Z. Wen, C. Li, D. Wu, A. Li, and N. Ming, Nat. Mater. 12, 617 (2013). https://doi.org/10.1038/nmat3649
"Strain-gated piezotronic transistors based on vertical zinc oxide nanowires," W. Han, Y. Zhou, Y. Zhang, C.-Y. Chen, L. Lin, X. Wang, S. Wang, and Z. L. Wang, ACS Nano 6, 3760 (2012). https://doi.org/10.1021/nn301277m
"Solid-state memories based on ferroelectric tunnel junctions," A. Chanthbouala, A. Crassous, V. Garcia, K. Bouzehouane, S. Fusil, X. Moya, J. Allibe, B. Dlubak, J. Grollier, S. Xavier, C. Deranlot, A. Moshar, R. Proksch, N. D. Mathur, M. Bibes, and A. Barthélémy, Nat. Nanotechnol. 7, 101 (2012). https://doi.org/10.1038/nnano.2011.213
"Single-layer MoS2 transistors," B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, Nat. Nanotechnol. 6, 147 (2011). https://doi.org/10.1038/nnano.2010.279
"Creation of a two-dimensional electron gas at an oxide interface on silicon," J. W. Park, D. F. Bogorin, C. Cen, D. A. Felker, Y. Zhang, C. T. Nelson, C. W. Bark, C. M. Folkman, X. Q. Pan, M. S. Rzchowski, J. Levy, and C. B. Eom, Nat. Commun. 1, 94 (2010). https://doi.org/10.1038/ncomms1096
"High resolution, high sensitivity inorganic resists," J. Stowers and D. A. Keszler, Microelectron. Eng. 86, 730 (2009). https://doi.org/10.1016/j.mee.2008.11.034
"Tailoring GaN semiconductor surfaces with biomolecules," E. Estephan, C. Larroque, F. J. G. Cuisinier, Z. Bálint, and C. Gergely, J. Phys. Chem. B 112, 8799 (2008). https://doi.org/10.1021/jp804112y
"Organic single-crystal field-effect transistors of a soluble anthradithiophene," O. D. Jurchescu, S. Subramanian, R. J. Kline, S. D. Hudson, J. E. Anthony, T. N. Jackson, and D. J. Gundlach, Chem. Mater. 20, 6733 (2008). https://doi.org/10.1021/cm8021165
"Hunting the origins of line width roughness with chemical force microscopy," J. T. Woodward, J. Hwang, V. M. Prabhu, and K.-W. Choi, in CP931, Frontiers of Characterization and Metrology for Nanoelectronics (eds. D. G. Seiler, A. C. Diebold, R. McDonald, C. M. Gamer, D. Herr, R. P. Khosla, and E. M. Secula), AIP Conference Proceedings 931, 413 (2007). https://doi.org/10.1063/1.2799409
"Defect-free fabrication for single crystal silicon substrate by chemo-mechanical grinding," L. Zhou, H. Eda, J. Shimizu, S. Kamiya, H. Iwase, S. Kimura, and H. Sato, CIRP Ann. Manuf. Technol. 55, 313 (2006). https://doi.org/10.1016/S0007-8506(07)60424-7
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